中華光電學會 北加州分會   The Electro-Optics Association  The Photonics Society of Chinese-Americans Northern California Chapter

中華光電學會

2016 Seminar

2016年07月23日 (Stanford, CA)　

Nanomaterials for integrated macroelectronics

Abstract:

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium–gallium–zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium–gallium–zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

Bio:

Haitian Chen( 陳海天博士) is currently a Product Engineer in the Logic Technology Development division at Intel Corporation. As a product engineer, he is involved in the New Product Introduction (NPI) process, test program improvement, yield improvement, performance improvement, and Design of Experiment (DOE) analysis of System-on-Chip (SoC) products. He received his Ph.D. degree in Electrical Engineering in 2014 from the University of Southern California, Los Angeles, CA. His research focus during his doctoral program had been in the area of semiconducting nanomaterials for macroelectronics. He authored and co-authored 15 journal articles in peer-reviewed journals. And he has 5 U.S. patents.　　　

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